Embedded Files
2025
Deb, Deepjyoti, Baruah, Ratul Kr, and Goswami, Rupam, "Impact of Incomplete Ionization in Presence of Interface Traps in p-i-n TFET and n-p-n Double Gate TFET," Materials Science and Semiconductor Processing, Accepted.
Sohtun, P., Deb, D., Bora, N. et al., "Agriculture biomass-derived carbon materials for their application in sustainable energy storage," Carbon Letters, vol. 35, pp. 481–513, Apr. 2025. https://doi.org/10.1007/s42823-025-00884-9.
Deb, Deepjyoti, Goswami, Rupam, Baruah, Ratul Kr, "Investigation of parametric variation, gate engineering, RF parameters and interface traps in SOI L-body double gate tunnel field effect transistor", Materials Science and Engineering: B, vol. 316, 118127, June 2025. https://doi.org/10.1016/j.mseb.2025.118127.
Choudhury, Hirakjyoti, Gogoi, Pallab Kr, Knaap, Ramon van der, Goswami, Rupam, Vanhamel, Jurgen, "Development of a SPICE Model for Fabricated PLA/Al/Egg Albumin/Al Memristors Using Joglekar's Approach", Electronics, vol. 14, no. 5, 838, Feb. 2025. https://doi.org/10.3390/electronics14050838.
Lahkar, Himangshu, Medhi, Anurag, Deb, Deepjyoti, Saha, Rajesh, Baruah, Ratul Kr, Goswami, Rupam, "Statistical variability of physically localized interface traps in SOI n-p-n DG TFETs", Journal of Material Science: Materials in Electronics, vol. 36, 365 Feb. 2025. https://doi.org/10.1007/s10854-025-14404.
Choudhury, Hirakjyoti, Gautam, Raja Vipul, Goswami, Rupam, Kumar, Vikas, "A SPICE model calibration framework for egg albumin memristors", Physica Scripta, vol. 100, no. 4, 45966, Mar. 2025. https://doi.org/10.1088/1402-4896/adbd84.
Jaiswal, Saurabh, Dubey, Divya, Singh, Shilpi, Goswami, Rupam, Goswami, Manish, Kandpal, Kavindra, "On-Current Improvement in Bulk-Accumulated Double-Gate ZnO TFT", Journal of Electronic Materials, vol. 54, no. 1, pp. 51-58, Jan. 2025. https://doi.org/10.1007/s11664-024-11569-w.
2024
Deb, Deepjyoti, Goswami, Rupam, Baruah, Ratul Kr, "Random Telegraph Noise Due to Dielectric-Semiconductor Interface Traps in MOS Transistors", IEEE Transactions on Dielectrics and Electrical Insulation, Early Access, Nov. 2024. https://doi.org/10.1109/TDEI.2024.3491672.
Rai, Shashank, Sharma, Ritu, Saha, Rajesh, Bhowmick, Brinda, Goswami, Rupam, "Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs", Physica Scripta, vol. 99, no. 7, June 2024. https://doi.org/10.1088/1402-4896/ad562d.
Das, Prachuryya Subash, Nath, Dwipayan, Deb, Deepjyoti, Pathak, Priyam, Choudhury, Hirakjyoti, Goswami, Rupam, "Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs", Microsystem Technologies, vol. 31, pp. 1089 - 1101, May 2025. https://doi.org/10.1007/s00542-024-05637-8.
Gupta, Anita, Sharma, Santanu, Goswami, Rupam, "Review: Silicon Based ISFET: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation", ECS Journal of Solid State Science and Technology, vol. 13, no. 4, Apr. 2024. https://doi.org/10.1149/2162-8777/ad3d07.
Pathak, Priyam, Deb, Deepjyoti, Nath, Dwipayan, Das, Prachuryya Subash, Choudhury, Hirakjyoti, Goswami, Rupam, "Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors", Journal of Electronic Materials, vol. 42, pp. 1142–1160, Mar. 2024. https://doi.org/10.1007/s11664-023-10852-6.
Das, Prachuryya Subash, Deb, Deepjyoti, Goswami, Rupam, Sharma, Santanu, Saha, Rajesh, "Fin core dimensionality and corner effect in dual core gate-all-around FinFET", Microelectronics Journal, vol. 143, 105985, Jan. 2024. https://doi.org/10.1016/j.mejo.2023.105985.
Saha, Rajesh, Panda, Deepak Kumar, Goswami, Rupam, "Investigation on RF/analog performance in SiGe pocket n-tunnel FET", IETE Journal of Research, vol. 70, no. 3, pp. 2871-2877, IETE Journal of Research, Feb. 2024. https://doi.org/10.1080/03772063.2023.2181227
2023
Hazarika, Prajwalita, Ray, Mrigashree, Hazarika, Aditya, Deb, Deepjyoti, Das, Prachuryya Subash, Choudhury, Hirakjyoti, Goswami, Rupam, "Flatband voltage in MOS structures for spatial fixed oxide charge distributions", Journal of Materials Science: Materials in Electronics, vol. 34, no. 15, 1242, May 2023. https://doi.org/10.1007/s10854-023-10626-0.
Jaiswal, Saurabh, Goswami, Rupam, Goswami, Manish, Kandpal, Kavindra, "Impact of Interface Trap Distribution on the Performance of LTPS TFT", Silicon, vol. 15, no. 14, pp. 6269-6281, Sep. 2023. https://doi.org/10.1007/s12633-023-02503-6.
Saha, Rajesh, Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, "Simulation study of n+ pocket step shape heterodielectric double gate tunnel FET for switching and biosensing applications", Materials Science and Engineering: B, vol. 293, 116491, July 2023. https://doi.org/10.1016/j.mseb.2023.116491.
Saha, Rajesh, Panda, Deepak Kumar, Goswami, Rupam, , "Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET", Ferroelectrics, vol. 602, no. 1, pp. 204-214, Jan. 2023. https://doi.org/10.1080/00150193.2022.2149315
Routh, Sujay, Deb, Deepjyoti, Baruah, Ratul Kumar, Goswami, Rupam, "Impact of High-temperature and Interface Traps on Performance of a Junctionless Tunnel FET", Silicon, vol. 15, no. 6, pp. 2703-2714, Apr. 2023. https://doi.org/10.1007/s12633-022-02191-8.
2022
Mangla, Ayush, Saha, Rajesh, Goswami, Rupam, "Impact on performance of dual stack hetero-gated dielectric modulated TFET biosensor due to Si1-xGex pocket variation", Microelectronics Journal, vol. 129, 105603, Nov. 2022. https://doi.org/10.1016/j.mejo.2022.105603.
Saha, Rajesh, Goswami, Rupam, Panda, Deepak Kumar, "Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET", Microelectronics Journal, vol. 130, 105629, Dec. 2022. https://doi.org/10.1016/j.mejo.2022.105629.
Chander, Sweta, Sinha, Sanjeet Kumar, Chaudhary, Rekha, Goswami, Rupam, "Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors", Semiconductor Science and Technology, vol. 37, no. 7, 75011, May 2022. https://doi.org/10.1088/1361-6641/ac696e.
Deb, Deepjyoti, Goswami, Rupam, Baruah, Ratul Kr, Saha, Rajesh, Kandpal, Kavindra, "Role of gate electrode in influencing interface trap sensitivity in SOI tunnel FETs", Journal of Micromechanics and Microengineering, vol. 32, no. 4, 44006, Mar. 2022. https://doi.org/10.1088/1361-6439/ac56e8.
Toan, Ho Le Minh, Goswami, Rupam, "Impact of gate dielectric on overall electrical performance of quadruple gate FinFET", Applied Physics A, vol. 128, no. 2, 103, Jan. 2022. https://doi.org/10.1007/s00339-021-05210-4.
Deb, Deepjyoti, Goswami, Rupam, Baruah, Ratul Kr, Kandpal, Kavindra, Saha, Rajesh, "Parametric investigation and trap sensitivity of npn double gate TFETs", Computers and Electrical Engineering, vol. 100, 107930, May 2022. https://doi.org/10.1016/j.compeleceng.2022.107930.
Saha, Rajesh, Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, "Comprehensive investigation of radiofrequency/analog parameters in a ferroelectric tunnel field-effect transistor", Semiconductor Science and Technology, vol. 37, no. 3, 35008, Jan. 2022. https://doi.org/10.1088/1361-6641/ac3dd4.
Saha, Rajesh, Panda, Deepak Kumar, Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, "DC and RF/analog parameters in Ge-source split drain-ZHP-TFET: Drain and pocket engineering technique", International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 35, no. 3, pp. e2967, 2022. https://doi.org/10.1002/jnm.2967.
Saha, Rajesh, Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, , "Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)", Silicon, pp. 5713-5718, July 2022. https://doi.org/10.1007/s12633-021-01365-0
Mehta, Manan, Goswami, Rupam, "Perspectives on Dielectric Modulated Biosensing in Silicon Tunnel FETs", Silicon, vol. 14, Feb. 2022. https://doi.org/10.1007/s12633-021-00945-4.
2021
Kumar, Vikas, Parida, Manoj Kumar, Goswami, Rupam, Deb, Deepjyoti, "Model for predicting the threshold voltage of tunnel field-effect transistors using linear regression", Journal of Electronic Materials, vol. 50, pp. 6015-6019, Nov. 2021. https://doi.org/10.1007/s11664-021-09189-9.
Desai, Mohil S, Kandpal, Kavindra, Goswami, Rupam, "A Multiple-Trapping-and-Release Transport Based Threshold Voltage Model for Oxide Thin Film Transistors", Journal of Electronic Materials, pp. 4050-4057, July 2021. https://doi.org/10.1007/s11664-021-08907-7.
Sodhani, Aditya, Goswami, Rupam, Kandpal, Kavindra, "Design of pixel circuit using a-IGZO TFTs to enhance uniformity of AMOLED displays by threshold voltage compensation", Arabian Journal for Science and Engineering, pp. 9663-9672, Oct. 2021. https://doi.org/10.1007/s13369-021-05457-2.
Saha, Rajesh, Panda, Deepak Kumar, Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, "Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge-source DMDG TFET", International Journal of RF and Microwave Computer-Aided Engineering, vol. 31, e22579, Feb. 2021. https://doi.org/10.1002/mmce.22579.
Manocha, Pratyush, Kandpal, Kavindra, Goswami, Rupam, "Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors", Silicon, vol. 13, pp. 707-717, Mar. 2021. https://doi.org/10.1007/s12633-020-00452-y.
2020
Shukla, Sambhavi, Goswami, Rupam, "Performance Assessment of TFETs for low power applications: challenges and prospects", ECS Journal of Solid-State Science and Technology, vol. 9, no. 8, Sep. 2020. https://doi.org/10.1149/2162-8777/abb797.
Saha, Rajesh, Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, "Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study", IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 67, no. 11, Nov. 2020. https://doi.org/10.1109/TUFFC.2020.2999518.
Sahu, Sushree Anusmita, Goswami, Rupam, Mohapatra, S. K., "Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation", Silicon, vol. 12, pp. 513-520, Mar. 2020. https://doi.org/10.1007/s12633-019-00159-9.
2019
Puja, Ghosh, Goswami, Rupam, Bhowmick, Brinda, "Optimization of ferroelectric tunnel junction TFET in presence of temperature and its RF analysis", Microelectronics Journal, vol. 92, 104618, Oct. 2019. https://doi.org/10.1016/j.mejo.2019.104618.
Saikia, Ayan, Raj, Ashish, Goswami, Rupam, "TCAD calibration and performance investigation of an ISFET-based TNT (explosive) sensor", Journal of Computational Electronics, vol. 18, pp. 1469-1477, Dec. 2019. https://doi.org/10.1007/s10825-019-01373-9.
Goswami, Rupam, Bhowmick, Brinda, "Comparative Analyses of Circular Gate TFET and Heterojunction TFET for Dielectric-Modulated Label-Free Biosensing", IEEE Sensors Journal, vol. 19, no. 21, pp. 9600-9609, Nov. 2019. https://doi.org/10.1109/JSEN.2019.2928182.
2018
Goswami, Rupam, Bhowmick, Brinda, , "A temperature-dependent surface potential-based algorithm for extraction of threshold voltage in homojunction TFETs", International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 31, no. 3, e2304, 2018. https://doi.org/10.1002/jnm.2304.
2017
Goswami, Rupam, Bhowmick, Brinda, , "An analytical model of drain current in a nanoscale circular gate TFET", IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 45-51, Jan. 2017. https://doi.org/10.1109/TED.2016.2631532.
Goswami, Rupam, Bhowmick, Brinda, "An algorithm for extraction of threshold voltage in heterojunction TFETs", IEEE Transactions on Nanotechnology, vol. 16, no. 1, pp. 90-93, Jan. 2017. https://doi.org/10.1109/TNANO.2016.2628778.
2016
Mitra, Suman Kr, Goswami, Rupam, Bhowmick, Brinda, "A hetero-dielectric stack gate SOI-TFET with back gate and its application as a digital inverter", Superlattices and Microstructures, vol. 92, pp. 37-51, Apr. 2016. https://doi.org/10.1016/j.spmi.2016.01.040.
Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, "Physics-based surface potential, electric field and drain current model of a deltap+ Si1-xGex gate-drain underlap nanoscale n-TFET", International Journal of Electronics, vol. 103, no. 9, pp. 1566-1579, Feb. 2016. https://doi.org/10.1080/00207217.2016.1138514.
Das, B, Goswami, R, Bhowmick, B, "A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT", Pramana, vol. 86, pp. 723-736, Apr. 2016. https://doi.org/10.1007/s12043-015-1100-y.
Das, Rajashree, Goswami, Rupam, Baishya, Srimanta, , "Tri-gate heterojunction SOI Ge-FinFETs", Superlattices and Microstructures, vol. 91, pp. 51-61, Mar. 2016. https://doi.org/10.1016/j.spmi.2015.12.039.
Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, "Effect of scaling on noise in Circular Gate TFET and its application as a digital inverter", Microelectronics Journal, vol. 53, pp. 16-24, July 2016. https://doi.org/10.1016/j.mejo.2016.04.009.
2015
Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta, , "Electrical noise in Circular Gate Tunnel FET in presence of interface traps", Superlattices and Microstructures, vol. 86, pp. 342-354, Oct. 2015. https://doi.org/10.1016/j.spmi.2015.07.064.
Bhowmick, Brinda, Goswami, Rupam, Das, Basab, "A Mathematical Model and an Algorithm for Transmission in Single Rectangular Potential Barriers", International Journal of Pure and Applied Mathematics, vol. 101, no. 5, pp. 605-615, 2015. https://acadpubl.eu/jsi/2015-101-5-6-7-8/2015-101-5/1/1.pdf.
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